? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c75 v v dgr t j = 25 c to 175 c, r gs = 1m 75 v v gsm transient 20 v i d25 t c = 25 c (chip capability) 230 a i lrms lead current limit, rms 160 a i dm t c = 25 c, pulse width limited by t jm 700 a i a t c = 25 c 115 a e as t c = 25 c 850 mj p d t c = 25 c 480 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c weight to-263 3 g v dss = 75v i d25 = 230a r ds(on) 4.2m ds100244(03/10) IXFA230N075T2-7 advance technical information trencht2 tm hiperfet tm power mosfet symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 75 v v gs(th) v ds = v gs , i d = 1ma 2.0 4.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 25 a t j = 150 c 250 a r ds(on) v gs = 10v, i d = 50a, notes 1& 2 4.2 m n-channel enhancement mode avalanche rated fast intrinsic rectifier features z international standard package z 175c operating temperature z high current handling capability z avalanche rated z fast intrinsic rectifier z low r ds(on) advantages z easy to mount z space savings z high power density applications z automotive - motor drives - 12v power bus - abs systems z dc/dc converters and off-line ups z primary- side switch z high current switching applications to-263 (7-lead) pins: 1 - gate 2, 3 - source 5,6,7 - source tab (8) - drain 1 7 tab
ixys reserves the right to change limits, test conditions, and dimensions. IXFA230N075T2-7 notes: 1. pulse test, t 300 s; duty cycle, d 2%. 2. on through-hole packages, r ds(on) kelvin test contact location must be 5mm or less from the package body. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2, 3 - source 4 - drain 5,6,7 - source tab (8) - drain to-263 (7-lead) (ixfa..7) outline advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 50 85 s c iss 10.5 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1165 pf c rss 125 pf t d(on) 23 ns t r 18 ns t d(off) 33 ns t f 15 ns q g(on) 178 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 53 nc q gd 41 nc r thjc 0.31 c/w souce-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 230 a i sm repetitive, pulse width limited by t jm 900 a v sd i f = 100a, v gs = 0v, note 1 1.3 v t rr 59 ns i rm 3.6 a q rm 106 nc resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 2 (external) i f = 115a, v gs = 0v -di/dt = 100a/ s v r = 37v
? 2010 ixys corporation, all rights reserved IXFA230N075T2-7 fig. 1. output characteristics @ t j = 25oc 0 40 80 120 160 200 240 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v ds - volts i d - amperes v gs = 15v 10v 9v 7v 5v 6v 8v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 280 320 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 5v 6v 7v fig. 3. output characteristics @ t j = 150oc 0 40 80 120 160 200 240 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7 v 5 v 6 v fig. 4. r ds(on) normalized to i d = 115a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 230a i d = 115a fig. 5. r ds(on) normalized to i d = 115a value vs. drain current 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 50 100 150 200 250 300 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 175 200 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXFA230N075T2-7 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 0 20406080100120140160 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 240 270 300 0.40.50.60.70.80.91.01.11.21.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v gs - volts v ds = 38v i d = 115a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1000 110100 v ds - volts i d - amperes external lead current limit 25s 100s 1ms 10ms 100ms dc r ds(on) limit
? 2010 ixys corporation, all rights reserved IXFA230N075T2-7 fig. 14. resistive turn-on rise time vs. drain current 10 12 14 16 18 20 22 110 120 130 140 150 160 170 180 190 200 210 220 230 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 2 ? , v gs = 10v v ds = 38v fig. 15. resistive turn-on switching times vs. gate resistance 5 10 15 20 25 30 35 40 45 50 2 4 6 8 10 12 14 16 r g - ohms t r - nanoseconds 10 15 20 25 30 35 40 45 50 55 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 38v i d = 230a, 115a fig. 16. resistive turn-off switching times vs. junction temperature 10 12 14 16 18 20 22 24 26 28 30 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 15 20 25 30 35 40 45 50 55 60 65 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 2 ? , v gs = 10v v ds = 38v i d = 115a i d = 230a fig. 17. resistive turn-off switching times vs. drain current 10 12 14 16 18 20 22 24 26 110 120 130 140 150 160 170 180 190 200 210 220 230 i d - amperes t f - nanoseconds 20 25 30 35 40 45 50 55 60 t d(off) - nanoseconds t f t d(off) - - - - r g = 2 ? , v gs = 10v v ds = 38v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 10 12 14 16 18 20 22 24 26 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 2 ? , v gs = 10v v ds = 38v i d = 115a i d = 230a fig. 18. resistive turn-off switching times vs. gate resistance 0 40 80 120 160 200 240 280 2 4 6 8 10 12 14 16 r g - ohms t f - nanoseconds 0 40 80 120 160 200 240 280 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 38v i d = 230a i d = 115a
ixys reserves the right to change limits, test conditions, and dimensions. IXFA230N075T2-7 fig. 19. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: t_230n075t2(v6)2-26-10-c
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